Sun, Bin’s team published research in Advanced Materials (Weinheim, Germany) in 2022 | CAS: 13465-09-3

Indium(III) bromide(cas: 13465-09-3) is used as a catalyst to produce dithioacetals when unactivated alkynes react with thiols and fields such as optics and microelectronics that utilize semiconductor technology have wide uses for indium in high-performing solar cells.Name: Indium(III) bromide

In 2022,Sun, Bin; Najarian, Amin Morteza; Sagar, Laxmi Kishore; Biondi, Margherita; Choi, Min-Jae; Li, Xiyan; Levina, Larissa; Baek, Se-Woong; Zheng, Chao; Lee, Seungjin; Kirmani, Ahmad R.; Sabatini, Randy; Abed, Jehad; Liu, Mengxia; Vafaie, Maral; Li, Peicheng; Richter, Lee J.; Voznyy, Oleksandr; Chekini, Mahshid; Lu, Zheng-Hong; Garcia de Arquer, F. Pelayo; Sargent, Edward H. published an article in Advanced Materials (Weinheim, Germany). The title of the article was 《Fast Near-Infrared Photodetection Using III-V Colloidal Quantum Dots》.Name: Indium(III) bromide The author mentioned the following in the article:

Colloidal quantum dots (CQDs) are promising materials for IR (IR) light detection due to their tunable bandgap and their solution processing; however, to date, the time response of CQD IR photodiodes is inferior to that provided by Si and InGaAs. It is reasoned that the high permittivity of II-VI CQDs leads to slow charge extraction due to screening and capacitance, whereas III-Vs-if their surface chem. can be mastered-offer a low permittivity and thus increase potential for high-speed operation. In initial studies, it is found that the covalent character in indium arsenide (InAs) leads to imbalanced charge transport, the result of unpassivated surfaces, and uncontrolled heavy doping. Surface management using amphoteric ligand coordination is reported, and it is found that the approach addresses simultaneously the In and As surface dangling bonds. The new InAs CQD solids combine high mobility (0.04 cm2 V-1 s-1) with a 4x reduction in permittivity compared to PbS CQDs. The resulting photodiodes achieve a response time faster than 2 ns-the fastest photodiode among previously reported CQD photodiodes-combined with an external quantum efficiency (EQE) of 30% at 940 nm. In the experiment, the researchers used Indium(III) bromide(cas: 13465-09-3Name: Indium(III) bromide)

Indium(III) bromide(cas: 13465-09-3) is used as a catalyst to produce dithioacetals when unactivated alkynes react with thiols and fields such as optics and microelectronics that utilize semiconductor technology have wide uses for indium in high-performing solar cells.Name: Indium(III) bromide

Referemce:
Bromide – Wikipedia,
bromide – Wiktionary