Formula: Br3InIn 2020 ,《In Situ Transmission Electron Microscopy Measurements of Ge Nanowire Synthesis with Liquid Metal Nanodroplets in Water》 was published in ACS Nano. The article was written by Cheek, Quintin; Fahrenkrug, Eli; Hlynchuk, Sofiya; Alsem, Daan Hein; Salmon, Norman J.; Maldonado, Stephen. The article contains the following contents:
The growth of Ge nanowires in water inside a liquid transmission electron microscope (TEM) holder has been demonstrated at room temperature Each nanowire growth event was stimulated by the incident electron beam on otherwise unsupported liquid Ga or liquid In nanodroplets. A variety of conditions were explored, including liquid metal nanodroplet surface condition, liquid metal nanodroplet size and d., formal concentration of dissolved GeO2, and electron beam intensity. The cumulative observations from a series of videos recorded during growth events suggested the following points. First, the conditions necessary for initiating nanowire growth at uncontacted liquid metal nanodroplets in a liquid TEM cell indicate the process was governed by solvated electrons generated from secondary electrons scattered by the liquid metal nanodroplets. The attained current densities were comparable to those achieved in conventional electrochem. liquid-liquid-solid (ec-LLS) growths outside of a TEM. Second, the surface condition of the liquid metal nanodroplets was quite influential on whether nanowire growth occurred and surface diffusion of Ge adatoms contributed to the rate of crystallization Third, the Ge nanowire growth rates were limited by the feed rate of Ge to the crystal growth front rather than the rate of crystallization at the liquid metal/solid Ge interface. Estimates of an electrochem. current for the reduction of dissolved GeO2 were nominally in line with currents used for Ge nanowire growth by ec-LLS outside of the TEM. Fourth, the Ge nanowire growths in the liquid TEM cell occurred far from thermodn. equilibrium, with supersaturation values of 104 prior to nucleation. These collective points provide insight on how to further control and improve Ge nanowire morphol. and crystallog. quality by the ec-LLS method.Indium(III) bromide(cas: 13465-09-3Formula: Br3In) was used in this study.
Indium(III) bromide(cas: 13465-09-3) is used as a catalyst to produce dithioacetals when unactivated alkynes react with thiols and fields such as optics and microelectronics that utilize semiconductor technology have wide uses for indium in high-performing solar cells.Formula: Br3In
Referemce:
Bromide – Wikipedia,
bromide – Wiktionary